The Pinch-Off Behaviour and Charge Distribution in AlGaN-GaN-AlGaN-GaN Double Heterostructure Field Effect Transistors

phys stat sol (a) ◽

10.1002/1521-396x(200111)188:1<259::aid-pssa259>3.0.co;2-5 ◽

2001 ◽

Vol 188 (1) ◽

pp. 259-262 ◽

Author(s):

M. Zervos ◽

A. Kostopoulos ◽

G. Constantinidis ◽

M. Kayambaki ◽

S. Mikroulis ◽

...

Keyword(s):

Charge Distribution ◽

Field Effect ◽

Field Effect Transistors ◽

Double Heterostructure ◽

Heterostructure Field Effect Transistors

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Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN

Applied Physics Letters ◽

10.1063/1.4875916 ◽

2014 ◽

Vol 104 (19) ◽

pp. 193506 ◽

Author(s):

Guowang Li ◽

Bo Song ◽

Satyaki Ganguly ◽

Mingda Zhu ◽

Ronghua Wang ◽

...

Keyword(s):

Quantum Wells ◽

Field Effect ◽

Field Effect Transistors ◽

Two Dimensional ◽

Dimensional Electron ◽

Electron Gases ◽

Double Heterostructure ◽

Strained Quantum Wells ◽

Heterostructure Field Effect Transistors

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Enhanced effect of polarization on electron transport properties in AlGaN/GaN double-heterostructure field-effect transistors

Applied Physics Letters ◽

10.1063/1.126542 ◽

2000 ◽

Vol 76 (21) ◽

pp. 3118-3120 ◽

Author(s):

Narihiko Maeda ◽

Tadashi Saitoh ◽

Kotaro Tsubaki ◽

Toshio Nishida ◽

Naoki Kobayashi

Keyword(s):

Electron Transport ◽

Transport Properties ◽

Field Effect ◽

Field Effect Transistors ◽

Double Heterostructure ◽

Heterostructure Field Effect Transistors ◽

Electron Transport Properties

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0.18 μm double-recessed III-nitride metal-oxide double heterostructure field-effect transistors

2007 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2007.4422460 ◽

2007 ◽

Author(s):

Vinod Adivarahan ◽

Mikhail Gaevski ◽

Naveen Tipirneni ◽

Bin Zhang ◽

Yanqing Deng ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Double Heterostructure ◽

Heterostructure Field Effect Transistors

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Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors

Applied Physics Letters ◽

10.1063/1.5037095 ◽

2018 ◽

Vol 112 (23) ◽

pp. 233503 ◽

Author(s):

Yuewei Zhang ◽

Chandan Joishi ◽

Zhanbo Xia ◽

Mark Brenner ◽

Saurabh Lodha ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Double Heterostructure ◽

Heterostructure Field Effect Transistors

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Material growth and device characterization of AlGaN/GaN single-heterostructure and AlGaN/GaN/AlGaN double-heterostructure field effect transistors on Si substrates

Applied Physics Express ◽

10.7567/apex.7.055501 ◽

2014 ◽

Vol 7 (5) ◽

pp. 055501 ◽

Author(s):

Yu-Lin Hsiao ◽

Chia-Ao Chang ◽

Edward Yi Chang ◽

Jer-Shen Maa ◽

Chia-Ta Chang ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Device Characterization ◽

Double Heterostructure ◽

Si Substrates ◽

Material Growth ◽

Heterostructure Field Effect Transistors

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Double-Recessed High-Frequency AlInGaN/InGaN/GaN Metal–Oxide Double Heterostructure Field-Effect Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2007.913001 ◽

2008 ◽

Vol 55 (2) ◽

pp. 495-499 ◽

Author(s):

Vinod Adivarahan ◽

Mikhail E. Gaevski ◽

Md. Monirul Islam ◽

Bin Zhang ◽

Yanqing Deng ◽

...

Keyword(s):

Metal Oxide ◽

High Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Double Heterostructure ◽

Heterostructure Field Effect Transistors

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Low frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors

Solid-State Electronics ◽

10.1016/s0038-1101(02)00475-6 ◽

2003 ◽

Vol 47 (6) ◽

pp. 1099-1104 ◽

Author(s):

N. Pala ◽

S. Rumyantsev ◽

M. Shur ◽

R. Gaska ◽

X. Hu ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Frequency Noise ◽

Low Frequency Noise ◽

Double Heterostructure ◽

Heterostructure Field Effect Transistors

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A novel analytical model for short channel heterostructure field effect transistors

Solid-State Electronics ◽

10.1016/s0038-1101(97)00291-8 ◽

1998 ◽

Vol 42 (4) ◽

pp. 605-612

Author(s):

Sang-Ho Song ◽

Dong Myong Kim

Keyword(s):

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Short Channel ◽

Heterostructure Field Effect Transistors

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Self-heating and the temperature dependence of the dc characteristics of GaN heterostructure field effect transistors

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.2172921 ◽

2006 ◽

Vol 24 (3) ◽

pp. 624-628 ◽

Author(s):

S. P. McAlister ◽

J. A. Bardwell ◽

S. Haffouz ◽

H. Tang

Keyword(s):

Temperature Dependence ◽

Field Effect ◽

Field Effect Transistors ◽

Self Heating ◽

Dc Characteristics ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Simulation of the effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field effect transistors using the Monte Carlo method

AIP Advances ◽

10.1063/5.0056337 ◽

2021 ◽

Vol 11 (8) ◽

pp. 085204

Author(s):

Yongxiong Yang ◽

Zhaojun Lin ◽

Mingyan Wang ◽

Heng Zhou ◽

Yang Liu ◽

...

Keyword(s):

Monte Carlo ◽

Monte Carlo Method ◽

Field Effect ◽

Field Effect Transistors ◽

Coulomb Field ◽

The Monte Carlo Method ◽

Polarization Coulomb Field Scattering ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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